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Home > products > Electronic IC Chips > BSH201,215 NPN PNP Transistors P Channel 60V 300mA ( Ta ) 417mW ( Ta ) Surface Mount

BSH201,215 NPN PNP Transistors P Channel 60V 300mA ( Ta ) 417mW ( Ta ) Surface Mount

manufacturer:
Manufacturer
Description:
P-Channel 60 V 300mA (Ta) 417mW (Ta) Surface Mount TO-236AB
Category:
Electronic IC Chips
Price:
Negotiation
Payment Method:
T/T, Western Union , ESCROW
Specifications
Categories:
Transistors - FETs, MOSFETs - Single
Drain To Source Voltage (Vdss):
60V
Current - Continuous Drain (Id) @ 25°C:
300mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
2.5 Ohm @ 160mA, 10V
Vgs(th) (Max) @ Id:
1V @ 1mA (Min)
Gate Charge (Qg) (Max) @ Vgs:
3nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:
70pF @ 48V
Highlight:

resistor equipped transistor

,

epitaxial planar pnp transistor

Introduction

 

BSH201 NPN PNP Transistors P-Channel 60V 300mA (Ta) 417mW (Ta) Surface Mount

 

P-channel enhancement mode BSH201 MOS transistor

 

 

FEATURES SYMBOL QUICK REFERENCE DATA • Low threshold voltage VDS = -60 V • Fast switching • Logic level compatible ID = -0.3 A • Subminiature surface mount package RDS(ON) ≤ 2.5 Ω (VGS = -10 V)
GENERAL DESCRIPTION PINNING SOT23
P-channel, enhancement mode, PIN DESCRIPTION logic level, field-effect power transistor. This device has low 1 gate threshold voltage and extremely fast switching making it ideal for 2 source battery powered applications and high speed digital interfacing. 3 drain
The BSH201 is supplied in the SOT23 subminiature surface mounting package.

 

 

Product Attributes Select All
Categories Discrete Semiconductor Products
  Transistors - FETs, MOSFETs - Single
Manufacturer Nexperia USA Inc.
Series -
Packaging Tape & Reel (TR)
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 300mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 2.5 Ohm @ 160mA, 10V
Vgs(th) (Max) @ Id 1V @ 1mA (Min)
Gate Charge (Qg) (Max) @ Vgs 3nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 70pF @ 48V
FET Feature -
Power Dissipation (Max) 417mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-236AB

 

 

 

 

 

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