300W-500W Amplifier TO-220 IRFB4227PBF PDP Switch
manufacturer:
Infineon
Description:
N-Channel 200 V 65A (Tc) 330W (Tc) Through Hole TO-220AB
Category:
Electronic IC Chips
Price:
To be negotiated
Payment Method:
T/T, Western Union ,paypal
Specifications
PN:
IRFB4227PB
Brand:
INFINEON
Original:
Germany
Package:
TO-220
Type:
PDP Switch Advanced Process
Operating Junction Temperature:
175°C
Highlight:
IRFB4227PB PDP Switch
,TO-22 PDP Switch
,500W Amplifier PDP Power MOSFET
Introduction
IRFB4227PB PDP Switch Advanced Process Technology INFINEON Germany
Features
Advanced Process Technology
Key Parameters Optimized for PDP Sustain,
Energy Recovery and Pass Switch Applications
Low EPULSE Rating to Reduce Power
Dissipation in PDP Sustain, Energy Recovery and Pass Switch Applications
Low QG for Fast Response
High Repetitive Peak Current Capability for Reliable Operation
Short Fall & Rise Times for Fast Switching
175°C Operating Junction Temperature for Improved Ruggedness
Repetitive Avalanche Capability for Robustness and Reliability
Class-D Audio Amplifier 300W-500W (Half-bridge)
Description
This HEXFET⑧Power MOSFET is specifically designed for Sustain;
This HEXFET⑧Power MOSFET is specifically designed for Sustain;
Energy Recovery & Pass switch applications in Plasma Display Panels.
This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area
and low EpuL sE rating. Additional features of this MOSFET are 175°C
operating junction temperature and high repetitive peak current capability.
operating junction temperature and high repetitive peak current capability.
These features combine to make this MOSFET a highly efficient, robust and reliable device for PDP driving applications.
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Stock:
MOQ:
10pcs