PNP / NPN Epitaxial Planar silicon power transistors 2SC5707 for High Current Switching
power mosfet ic
,multi emitter transistor
PNP / NPN Epitaxial Planar silicon power transistors 2SC5707 for High Current Switching
Applications
• DC / DC converter, relay drivers, lamp drivers, motor drivers, flash
Features
• Adoption of FBET and MBIT processes.
• Large current capacitance.
• Low collector-to-emitter saturation voltage.
• High-speed switching.
• High allowable power dissipation.
Specifications ( ) : 2SA2040
Parameter | Symbol | Conditions | Ratings | Unit |
Collector-to-Base Voltage | VCBO | -- | (--50)100 | V |
Collector-to-Emitter Voltage | VCES | -- | (--50)100 | V |
Collector-to-Emitter Voltage | VCEO | -- | (--)50 | V |
Emitter-to-Base Voltage | VEBO | -- | (--)6 | V |
Collector Current | IC | -- | (--)8 | A |
Collector Current (Pulse) | ICP | -- | (--)11 | A |
Base Current | IB | -- | (--)2 | A |
Collector Dissipation | PC |
-- Tc=25°C |
1.0 15 |
W W |
Junction Temperature | Tj | -- | 150 | °C |
Storage Temperature | Tstg | -- | --55 to +150 | °C |
Parameter | Symbol | Conditions | min. | Typ. | max. | unit |
Collector Cutoff Current | ICBO | VCB=(--)40V, IE=0A | -- | -- | (--)0.1 | µA |
Emitter Cutoff Current | IEBO | VEB=(--)4V, IC=0A | -- | -- | (--)0.1 | µA |
DC Current Gain | hFE | VCE=(--)2V, IC=(--)500mA | 200 | -- | 560 | -- |
Gain-Bandwidth Product | fT | VCE=(--)10V, IC=(--)500mA | -- | (290)330 | -- | MHz |
Output Capacitance | Cob | VCB=(--)10V, f=1MHz | -- | (50)28 | -- | pF |
Collector-to-Emitter Saturation Voltage |
VCE(sat)1 VCE(sat)2 |
IC=(--)3.5A, IB=(--)175mA IC=(--)2A, IB=(--)40mA |
-- -- |
(--230)160 (--240)110 |
(--390)240 (--400)170 |
mV mV |
Base-to-Emitterr Saturation Voltage | VBE(sat) | IC=(--)2A, IB=(--)40mA | -- | (--)0.83 | (--)1.2 | V |
Collector-to-Base Breakdown Voltage | V(BR)CBO | IC=(--)10µA, IE=0A | (--50)100 | -- | -- | V |
Collector-to-Emitter Breakdown Voltage | V(BR)CES | IC=(--)100µA, RBE=0Ω | (--50)100 | -- | -- | V |
Collector-to-Emitter Breakdown Voltage | V(BR)CEO | IC=(--)1mA, RBE=∞ | (--)50 | -- | -- | V |
Emitter-to-Base Breakdown Voltage | V(BR)EBO | IE=(--)10µA, IC=0A | (--)6 | -- | -- | V |
Turn-On Time | ton | See specified Test Circuit. | -- | (40)30 | -- | ns |
Storage Time | tstg | See specified Test Circuit. | -- | (225)420 | -- | ns |
Fall Time | tf | See specified Test Circuit. | -- | 25 | -- | ns |
Package Dimensions Package Dimensions
unit : mm unit : mm
7518-003 7003-003
Switching Time Test Circuit
0402 0.063W 10kOhm SMT Thick Film Chip Resistor RC0402JR-0710KL
200MHz MPZ1608S300ATAH0 Chip Beads 5A For Power Line TDK SMD0603
22R 5% SMD0402 Film Chip Resistors ERJ-2GEJ220X PANASONIC
MOV-20D751K 750V 6.5kA Varistor blue SMD Chip Resistor 1 Circuit Through Hole Disc 20mm
2SB1261-TP 10W General Purpose Rectifier Diode Silicon Epitaxial Planar Pnp Transistor
IXFK140N30P Polar Power Mosfet Hiperfet TO264 300V 140A
DF2B29FU,H3F TVS 24VWM 47V ESD Protection Diodes
PMEG6010ER 1A Low VF MEGA Schottky Barrier Rectifier SOD123
SK34SMA 3A SMD Schottky Barrier Rectifier Diodes DO - 214AC
SMBJ5.0A Silicon Avalanche Diodes 600W Surface Mount TVS Diodes
Image | Part # | Description | |
---|---|---|---|
0402 0.063W 10kOhm SMT Thick Film Chip Resistor RC0402JR-0710KL |
10 kOhms ±5% 0.063W, 1/16W Chip Resistor 0402 (1005 Metric) Moisture Resistant Thick Film
|
||
200MHz MPZ1608S300ATAH0 Chip Beads 5A For Power Line TDK SMD0603 |
30 Ohms 1 Power Line Ferrite Bead 0603 (1608 Metric) 5A 10mOhm
|
||
22R 5% SMD0402 Film Chip Resistors ERJ-2GEJ220X PANASONIC |
22 Ohms ±5% 0.1W, 1/10W Chip Resistor 0402 (1005 Metric) Automotive AEC-Q200 Thick Film
|
||
MOV-20D751K 750V 6.5kA Varistor blue SMD Chip Resistor 1 Circuit Through Hole Disc 20mm |
750 V 6.5 kA Varistor 1 Circuit Through Hole Disc 20mm
|
||
2SB1261-TP 10W General Purpose Rectifier Diode Silicon Epitaxial Planar Pnp Transistor |
Bipolar (BJT) Transistor PNP 60 V 3 A 50MHz 1 W Surface Mount D-Pak
|
||
IXFK140N30P Polar Power Mosfet Hiperfet TO264 300V 140A |
N-Channel 300 V 140A (Tc) 1040W (Tc) Through Hole TO-264AA (IXFK)
|
||
DF2B29FU,H3F TVS 24VWM 47V ESD Protection Diodes |
47V Clamp 3A (8/20µs) Ipp Tvs Diode Surface Mount USC
|
||
PMEG6010ER 1A Low VF MEGA Schottky Barrier Rectifier SOD123 |
Diode 60 V 1A Surface Mount SOD-123W
|
||
SK34SMA 3A SMD Schottky Barrier Rectifier Diodes DO - 214AC |
Diode 40 V 3A Surface Mount DO-214AC, SMA
|
||
SMBJ5.0A Silicon Avalanche Diodes 600W Surface Mount TVS Diodes |
9.2V Clamp 65.3A Ipp Tvs Diode Surface Mount DO-214AA (SMBJ)
|