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Home > products > Electronic IC Chips > NJW0281G NJW0302G Power Mosfet Transistor , NPN PNP Power Transistors

NJW0281G NJW0302G Power Mosfet Transistor , NPN PNP Power Transistors

manufacturer:
Manufacturer
Description:
Bipolar (BJT) Transistor NPN 250 V 15 A 30MHz 150 W Through Hole TO-3P-3L
Category:
Electronic IC Chips
Price:
Negotiate
Payment Method:
T/T, Western Union, Pyapal
Specifications
Collector-Emitter Voltage:
250 Vdc
Collector-Base Voltage:
250 Vdc
Emitter-Base Voltage:
5.0 Vdc
Base Current:
1.5 Adc
Total Power Dissipation @ TC = 25°C:
150 Watts
Operating And Storage Junction Temperature:
- 65 To +150 °C
Highlight:

power mosfet ic

,

silicon power transistors

Introduction

 

NJW0281G NJW0302G Power Mosfet Transistor , NPN PNP Power Transistors

 

Stock Offer (Hot Sell)

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Z85C3008PSC 4418 ZILOG 14+ DIP40
GT60M104 4450 TOS 14+ TO-3PL

 

 

NJW0281G (NPN)

NJW0302G (PNP)

 

Complementary NPN-PNP Power Bipolar Transistors

 

15 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 250 VOLTS, 150 WATTS

 

These complementary devices are lower power versions of the popular NJW3281G and NJW1302G audio output transistors. With superior gain linearity and safe operating area performance, these transistors are ideal for high fidelity audio amplifier output stages and other linear applications.

 

Features

• Exceptional Safe Operating Area

• NPN/PNP Gain Matching within 10% from 50 mA to 3 A

• Excellent Gain Linearity

• High BVCEO

• High Frequency

• These are Pb-Free Devices Bene

 

Benefits

• Reliable Performance at Higher Powers

• Symmetrical Characteristics in Complementary Configurations

• Accurate Reproduction of Input Signal

• Greater Dynamic Range

• High Amplifier Bandwith App

 

Applications

• High-End Consumer Audio Products

  ♦ Home Amplifiers

  ♦ Home Receivers

• Professional Audio Amplifiers

  ♦ Theater and Stadium Sound Systems

  ♦ Public Address Systems (PAs) MAXI

 

MAXIMUM RATINGS

Rating Symbol Value Unit
Collector-Emitter Voltage VCEO 250 Vdc
Collector-Base Voltage VCBO 250 Vdc
Emitter-Base Voltage VEBO 5.0 Vdc
Collector-Emitter Voltage - 1.5 V VCEX 250 Vdc

Collector Current - Continuous Collector Current

                            - Peak (Note 1)

IC

15

30

Adc
Base Current - Continuous IB 1.5 Adc
Total Power Dissipation @ TC = 25°C PD 150 Watts
Operating and Storage Junction Temperature Range TJ, Tstg - 65 to +150 °C

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

1. Pulse Test: Pulse Width = 5.0 ms, Duty Cycle < 10%.

 

 

 

PACKAGE DIMENSIONS

TO-3P-3LD

CASE 340AB-01

ISSUE A

 

 

 

 

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