2N2222A Power Mosfet Transistor NPN switching transistors HIGH SPEED SWITCHES
manufacturer:
Manufacturer
Description:
Bipolar (BJT) Transistor NPN 40 V 800 mA 300MHz 500 mW Through Hole TO-18
Category:
Electronic IC Chips
Price:
Negotiate
Payment Method:
T/T, Western Union, Paypal
Specifications
Collector-base Voltage:
75 V
Collector-emitter Voltage:
40 V
Emitter-base Voltage:
6 V
Collector Current (DC):
800 MA
Peak Collector Current:
800 MA
Operating Ambient Temperature:
−65 To +150 °C
Highlight:
multi emitter transistor
,silicon power transistors
Introduction
NPN switching transistors 2N2222; 2N2222A
FEATURES
• High current (max. 800 mA)
• Low voltage (max. 40 V).
APPLICATIONS
• Linear amplification and switching.
DESCRIPTION
NPN switching transistor in a TO-18 metal package. PNP complement: 2N2907A.
PINNING
| PIN | DESCRIPTION |
|---|---|
| 1 | emitter |
| 2 | base |
| 3 | collector, connected to case |
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
| SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
|---|---|---|---|---|---|
| VCBO |
collector-base voltage 2N2222 2N2222A |
open emitter |
- - |
60 75 |
V V |
| VCEO |
collector-emitter voltage 2N2222 2N2222A |
open base |
- - |
30 40 |
V V |
| VEBO |
emitter-base voltage 2N2222 2N2222A |
open collector |
- - |
5 6 |
V V |
| IC | collector current (DC) | - | 800 | mA | |
| ICM | peak collector current | - | 800 | mA | |
| IBM | peak base current | - | 200 | mA | |
| Ptot | total power dissipation | Tamb ≤ 25 °C | - | 500 | mW |
| Tcase ≤ 25 °C | - | 1.2 | W | ||
| Tstg | storage temperature | -65 | +150 | °C | |
| Tj | junction temperature | - | 200 | °C | |
| Tamb | operating ambient temperature | -65 | +150 | °C |
Stock Offer (Hot Sell)
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