Silicon PNP Epitaxial Planar audio power mosfet 2SB1560 ,
manufacturer:
Manufacturer
Description:
Bipolar (BJT) Transistor PNP - DarliCM GROUPon 150 V 10 A 50MHz 100 W Through Hole TO-3P
Category:
Electronic IC Chips
Price:
Negotiation
Payment Method:
T/T, Western Union, Paypal
Specifications
Package:
TO-3PN
Applications:
Audio ,regulator And General Purpose
Highlight:
npn smd transistor
,multi emitter transistor
Introduction
Silicon PNP Epitaxial Planar audio power mosfet 2SB1560 ,
DarliCM GROUPon 2SB1560
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2390)
| PIN | DESCRIPTION |
| 1 | Base |
| 2 | Collector;connected to mounting base |
| 3 | Emitter |
| SYMBOL | PARAMETER | CONDITIONS | VALUE | UNIT |
| VCBO | Collector-base voltage | Open emitter | -160 | V |
| VCEO | Collector-emitter voltage | Open base | -150 | V |
| VEBO | Emitter-base voltage | Open collector | -5 | V |
| IC | Collector current | -10 | A | |
| IB | Base current | 1 | A | |
| PC | Collector power dissipation | TC=25℃ | 100 | W |
| Tj | Junction temperature | 150 | ℃ | |
| Tstg | Storage temperature | -55~150 | ℃ |
| SYMBOL | PARAMETER | CONDITIONS | MIN | TYP. | MAX | UNIT |
| V(BR)CEO | Collector-emitter breakdown voltage | IC=-30mA ;IB=0 | -150 | V | ||
| VCEsat | Collector-emitter saturation voltage | IC=-7A ;IB=-7mA | -2.5 | V | ||
| VBEsat | Base-emitter saturation voltage | IC=-7A ;IB=-7mA | -3.0 | V | ||
| ICBO | Collector cut-off current | VCB=-160V; IE=0 | -100 | μA | ||
| IEBO | Emitter cut-off current | VEB=-5V; IC=0 | -100 | μA | ||
| hFE | DC current gain | IC=-7A ; VCE=-4V | 5000 | |||
| Cob | Output capacitance | IE=0 ; VCB=10V;f=1MHz | 230 | pF | ||
| fT | Transition frequency | IC=-2A ; VCE=-12V | 50 | MHz | ||
| Switching times | ||||||
| ton | Turn-on time |
IC=-7A;RL=10Ω |
0.8 | μs | ||
| ts | Storage time | 3.0 | μs | |||
| tf | Fall time | 1.2 | μs | |||
| O | P | Y |
| 5000-12000 | 6500-20000 | 15000-30000 |
PACKAGE OUTLINE
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