Silicon PNP Power Transistors ( Power Amplifier Applications ) 2SA1943
manufacturer:
Manufacturer
Description:
Bipolar (BJT) Transistor PNP 230 V 15 A 30MHz 150 W Through Hole TO-3P(L)
Category:
Electronic IC Chips
Price:
Negotiate
Payment Method:
T/T, Western Union, Paypal
Specifications
Collector-base Voltage:
-230 V
Collector-emitter Voltage:
-230 V
Emitter-base Voltage:
-5 V
Collector Current:
-15 A
Base Current:
-1.5 A
Collector Power Dissipation:
150 W
Junction Temperature:
150℃
Storage Temperature:
-55~150 ℃
Highlight:
npn smd transistor
,silicon power transistors
Introduction
Silicon PNP Power Transistors 2SA1943
DESCRIPTION
·With TO-3PL package
·Complement to type 2SC5200
APPLICATIONS
·Power amplifier applications
·Recommended for 100W high fidelity
audio frequency amplifier output stage
PINNING
| PIN | DESCRIPTION |
| 1 | Emitter |
| 2 |
Collector;connected to mounting base |
| 3 | Base |
CHARACTERISTICS Tj=25℃ unless otherwise specified
| SYMBOL | PARAMETER | CONDITIONS | MIN | TYP. | MAX | UNIT |
| V(BR)CEO | Collector-emitter breakdown voltage | IC=-50mA ;IB=0 | -230 | V | ||
| VCEsat | Collector-emitter saturation voltage | IC=-8A IB=-0.8A | -3.0 | V | ||
| VBE | Base-emitter voltage | IC=-7A ; VCE=-5V | -1.5 | V | ||
| ICBO | Collector cut-off current | VCB=-230V; IE=0 | -5 | μA | ||
| IEBO | Emitter cut-off current | VEB=-5V; IC=0 | -5 | μA | ||
| hFE-1 | DC current gain | IC=-1A ; VCE=-5V | 55 | 160 | ||
| hFE-2 | DC current gain | IC=-7A ; VCE=-5V | 35 | |||
| fT | Transition frequency | IC=-1A ; VCE=-5V | 30 | MHz | ||
| COB | Collector output capacitance | f=1MHz;VCB=-10V | 360 | pF |
hFE-1 classifications
| R | O |
| 55-110 | 80-160 |
PACKAGE OUTLINE
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